High breakdown voltage semiconductor device
US5003372A · kind A · utility
18Cited by
5References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 9, 1989 |
| Grant date | Mar 26, 1991 |
| Priority date | — |
| Expiry date | Jun 9, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/111
Abstract
A semiconductor device having a grooved field plate(s), a grooved field limiting ring(s) or a combination of a grooved field plate(s) and grooved field limiting ring(s) is disclosed. The grooved modification of the conventional semiconductor results in an increased break-down voltage over the conventional semiconductor device. A method for manufacturing the grooved semiconductor device is disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.