Voltage supply switching device for nonvolatile memories in MOS technology
US5003511A · kind A · utility
8Cited by
2References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 22, 1988 |
| Grant date | Mar 26, 1991 |
| Priority date | — |
| Expiry date | Nov 22, 2008 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C5/146
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Two P channel selection transistors are inserted in respective connecting circuit branches between two external pins with voltages Vcc and Vpp respectively and an internal node. A switching circuit controls said selection transistors. Circuit means are provided to hold the body bias of the selection transistors at a voltage equal to the highest voltage present from time to time at said external pins.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.