Apparatus for producing semiconductor devices
US5006192A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Nov 21, 1988 |
| Grant date | Apr 9, 1991 |
| Priority date | — |
| Expiry date | Nov 21, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/905
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An apparatus for treating wafers utilizing the plasma produced by a gas discharge and a method of cleaning such apparatus are disclosed. The apparatus is equipped with a device for forming a high voltage electric field in a space outside of the discharge space in which the wafer treating plasma is generated. The cleaning of the inner surfaces of the vacuum vessel of the apparatus is effected during the periods between the treatments by means of the plasma generated by the gas discharge started and sustained by the electric field device as well as by a main electrode for maintaining the treating discharge. The device for forming a high voltage electric field as mentioned above may comprise a limiter electrode surrounding the treating discharge space; alternatively, it may comprise an auxiliary electrode disposed in the space outside the treating discharge space. First, an etching gas capable of etching the films deposited on the inner surfaces of the vessel of the apparatus is introduced into the vessel as the discharge gas in the cleaning process; next, hydrogen is introduced into the vessel to remove the impurities adsorbed on the surfaces of the vessel. The etching gas may compri…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.