Plasma assited MO-CVD of perooskite dalectric films
US5006363A · kind A · utility
32Cited by
1References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 6, 1989 |
| Grant date | Apr 9, 1991 |
| Priority date | — |
| Expiry date | Dec 6, 2009 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/409
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Disclosed is a method of forming a Perovskite-type dielectric film on a substrate under low temperature by decomposing and reacting vapor of organometallic compound containing metal for the dielectric, vapor of organometallic compound containing titanium, and oxygen in a reduced-pressure and plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.