Ion evaporation source for tin
US5006715A · kind A · utility
2Cited by
3References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 16, 1989 |
| Grant date | Apr 9, 1991 |
| Priority date | — |
| Expiry date | May 16, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J27/26
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An ion evaporation source for tin ions is prepared by coating a source element with a wettability enhancing gallium coating, and then loading the source with tin. The tin may be the naturally occurring tin, but can be an enriched tin containing a higher concentration of Sn.sup.120. The source produces a beam having a high fraction of Sn.sup.+ and Sn.sup.++ ions, and a small amount of the ionized wettability coating material. All but the desired ions are readily separated from the beam.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.