Laser diode
US5007063A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Feb 12, 1990 |
| Grant date | Apr 9, 1991 |
| Priority date | — |
| Expiry date | Feb 12, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3432
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention relates to a laser diode which comprises a substantially rectangular body of a semiconductor material on the surface of a semiconductor substrate. The body has a pair of opposed end surfaces and side surfaces extending between the end surfaces. The body comprises a multiple quantum well active layer between cladding layers. An electrically insulating (separation) region extends through one of the cladding layers and through the active region to divide the body into a laser diode in which light is generated in the active layer by the recombination of oppositely charged carriers, and an absorber which can shift the generated light between the TE and TM modes when a small voltage is applied thereacross. A capping layer of an insulating semiconductor material is over the outermost cladding layer and conductive regions extend through the capping layer to the cladding layer in each of the laser diode and the absorber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.