Patent · US Expired

Non-planar field emission device having an emitter formed with a substantially normal vapor deposition process

US5007873A · kind A · utility

54Cited by
18References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 9, 1990
Grant dateApr 16, 1991
Priority date
Expiry dateFeb 9, 2010

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J9/025
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

A cold cathode field emission device having a cone shaped emitter (112, 208) formed with a substantially normal (but not absolutely normal) vapor deposition process (109) wherein the substrate (101, 201) need not be rotated with respect to the vapor deposition target. The vapor deposition process forms an encapsulating layer (111, 207) that can either be utilized as an electrode within the completed device, or that can be removed to allow subsequent construction of additional layers.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.