Method for etching chromium film formed on substrate
US5007984A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 27, 1988 |
| Grant date | Apr 16, 1991 |
| Priority date | — |
| Expiry date | Sep 27, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for etching a chromium film includes the steps of forming a resist having a phenol novolak resin as a principal chain on the chromium film formed on a substrate, and etching the chromium film using an etchant while stripping off the resist from the chromium film using an etchant containing nitric acid. A second method for etching a chromium film comprises the steps of forming an aluminum film or an aluminum alloy film on the chromium film formed on a substrate, forming a resist having a predetermined pattern on the aluminum film or the aluminum alloy film, etching the aluminum film or the aluminum alloy film and the chromium film using phosphoric acid, and removing by etching the aluminum film or the aluminum alloy film using phosphoric acid containing nitric acid after removing the resist.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.