Patent · US Expired

Tunable semiconductor laser

US5008893A · kind A · utility

11Cited by

7References

29Claims

0Family size

Assignee

Siemens Aktiengesellschaft · DE

Inventors

Markus-Christian Amann · Munich, DE
Gerhard Baumann · Ittigen, CH
Jochen Heinen · Haar, DE
Wolfgang Thulke · Munich, DE

Key dates

Filing date	Feb 15, 1990
Grant date	Apr 16, 1991
Priority date	—
Expiry date	Feb 15, 2010

Classification

Technology area (CPC H)Electricity
CPC primaryH01S5/12
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A tunable semiconductor laser which is formed on a substrate 2 which has a first contact 14 on one surface and a third contact 16 on the opposite surface so as to supply the operating current which is laterally limited to a laser-active stripe through a barrier layer 4 l and including a second contact 15 on a ridge waveguide 11, 12, 13 so as to inject charge carriers into a tuning layer 9 mounted adjacent an active layer 6 and which is separated from the active layer by highly doped central layer 10 so as to allow tuning of the laser.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.