Method of forming a transparent conductive film
US5009922A · kind A · utility
21Cited by
0References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 1, 1990 |
| Grant date | Apr 23, 1991 |
| Priority date | — |
| Expiry date | Mar 1, 2010 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC03C2218/151
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
In a method of forming a transparent conductive film, an arc discharge type plasma produced by arc discharging is generated in an atmosphere wherein the pressure of an atmospheric gas is 3.0 .times. 10.sup.-4 Torr or higher; the plasma is converged onto a vapor deposition material for forming a transparent conductive film to thereby evaporate the vapor deposition material, whereby said transparent conductive film is formed on a substrate located above said vapor deposition material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.