Method for forming a transparent conductive metal oxide film
US5009928A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Mar 23, 1990 |
| Grant date | Apr 23, 1991 |
| Priority date | — |
| Expiry date | Mar 23, 2010 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC03C2218/15
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
This invention relates to a method for forming a transparent conductive metal oxide film having good characteristic properties. The method comprises feeding an atomized or gasified starting material onto a substrate to form a metal oxide film on the substrate, wherein the substrate is heated to form a first metal oxide film having a good degree of orientation of crystals and a second film formation step wherein a second metal oxide film is formed on the first metal oxide film under higher substrate temperature conditions than those in the first film formation step to form a second metal oxide film having a degree of orientation of crystals in conformity with that of the first metal oxide film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.