Process for producing compound semiconductor using an amorphous nucleation site
US5010033A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 30, 1990 |
| Grant date | Apr 23, 1991 |
| Priority date | — |
| Expiry date | Apr 30, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/925
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for producing a compound semiconductor comprises applying a crystal forming treatment on a substrate having a free surface comprising a nonnucleation surface (S.sub.NDS) with smaller nucleation density and a nucleation surface (S.sub.NDL) arranged adjacent thereto having a sufficiently small area for a crystal to grow only from a single nucleus and a larger nucleation density (ND.sub.L) than the nucleation density (ND.sub.S) of said nonnucleation surface (S.sub.NDS), by exposing the substrate to either of the gas phases: PA0 (a) gas phase (a) containing a starting material (II) for feeding the group II atoms of the periodic table and a starting material (VI) for feeding the group VI atoms of the periodic table and PA0 (b) gas phase (b) containing a starting material (III) for feeding the group III atoms of the periodic table and a starting material (V) for feeding the group V atoms of the periodic table, thereby forming only a single nucleus on said nucleation surface (S.sub.NDL) and permitting a monocrystal of the compound semiconductor to grow from said single nucleus, characterized in that PA1 a semiconductor junction is formed in said monocrystal by feeding a starting…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.