Quantum well laser utilizing an inversion layer
US5010374A · kind A · utility
30Cited by
5References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 5, 1990 |
| Grant date | Apr 23, 1991 |
| Priority date | — |
| Expiry date | Jun 5, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34313
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A quantum well laser exhibiting near ideal switching characteristics, high power conversion efficiency and, moreover, capable of utilizing the advantageous characteristics of a double heterostructure optoelectronic switch comprises a quantum well region disposed between carrier confinement regions. In particular, the interface between the qunatum well regioin and a confinement region is adapted to the formation of an inversion layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.