Split collector vacuum field effect transistor
US5012153A · kind A · utility
353Cited by
5References
21Claims
0Family size
Inventors
Key dates
| Filing date | Dec 22, 1989 |
| Grant date | Apr 30, 1991 |
| Priority date | — |
| Expiry date | Dec 22, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K17/545
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A vacuum FET is designed to perform higher level functions such as logic AND, EXCLUSIVE OR (NOR), demultiplexing, or frequency multiplication with a single device. These higher level functions are accomplished by dividing the collector of the vacuum FET into multiple segments and by providing steering electrodes just above the emitter to deflect the field emission current to the various collector segments. The collector pattern, together with the configuration of the applied signals to the device, determines the higher order function performed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.