Three terminal semiconductor device
US5012301A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 22, 1990 |
| Grant date | Apr 30, 1991 |
| Priority date | — |
| Expiry date | Feb 22, 2010 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB82Y10/00
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A three terminal semiconductor device relies on resonant tunnelling through a quantum well resonator for its operation. The device has a first layer of a narrow bandgap semiconductor, a second layer of a narrow bandgap semiconductor, and a quantum well resonator between the first layer of a narrow bandgap semiconductor and the second layer of a narrow bandgap semiconductor. The quantum well resonator comprises a first layer of a wide bandgap semiconductor, a second layer of a wide bandgap semiconductor, and a third layer of a narrow bandgap semiconductor between the first layer of a wide bandgap semiconductor and the second layer of a wide bandgap semiconductor. All of the layers referred to above have a common conductivity polarity. The semiconductor device further comprises an electrical contact to the first layer of a narrow bandgap semicondcutor, an electrical contact to the second layer of a narrow bandgap semiconductor, and a terminal for applying a non-uniform electric field to the quantum well resonator to modulate resonant tunnelling characteristics of the quantum well resonator. The terminal for applying a non-uniform electric field to the quantum well resonator may compr…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.