Interconnection device between the cells of a pre-implanted hyperfrequency integrated circuit
US5012321A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jul 26, 1984 |
| Grant date | Apr 30, 1991 |
| Priority date | — |
| Expiry date | Jul 26, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention concerns pre-implanted circuits in a rapid semiconductor such as GaAs, comprising a network of cells formed of active and passive components. The cells are supplied but are not interconnected between one another. The interconnection between the cells is made by capacitive or magnetic coupling between two metallization levels separated by an insulating layer. Between a component of a first cell and a component of a second cell, both pre-implanted in a substrate, the interconnection made by means of microstrips supported by the substrate and in ohmic contact with the said components and microstrips supported by an insulating layer, microstrips and insulator forming capacities in the zones where there is covering.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.