Monolithic multiple beam semiconductor laser
US5012478A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 25, 1989 |
| Grant date | Apr 30, 1991 |
| Priority date | — |
| Expiry date | Sep 25, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/028
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A monolithic multiple beam semiconductor laser having a low power and a high power beam. A number of factors in the laser are coordinated in order to assure that both the low and high power beams operate at precisely the same frequency. The front and rear facet reflectances of the respective low and high power cavities are coordinated to each other and to the rated operating power levels of the respective lasers to achieve the same operating frequency from both beams. In a particular example, the low power cavity has front and rear facet reflectivities of 30% and a rated output power of 3 mw. The high power cavity has a rated operating power of 20 mw, a front facet reflectivity of 2%, and a rear facet reflectivity of 60%.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.