Preparation of high purity boron
US5013604A · kind A · utility
6Cited by
1References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 11, 1988 |
| Grant date | May 7, 1991 |
| Priority date | — |
| Expiry date | Oct 11, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/2982
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Boron particles in bead-like form suitable for use in the preparation of doped, single crystal silicon can be prepared using a fluidized bed technique for chemical vapor deposition of a boron hydride, such as diborane or decaborane.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.