Method of making a non-alloyed ohmic contact to III-V semiconductors-on-silicon
US5013685A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 2, 1989 |
| Grant date | May 7, 1991 |
| Priority date | — |
| Expiry date | Nov 2, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This invention concerns with a non-alloyed ohmic contact to III-V semiconductor material in a III-V semiconductor device on a Si base. The ohmic contact includes at least one set of layers comprising a delta-doped monolayer and a thin layer of undoped III-V semiconductor material which is 2.5 nm or less in thickness, said at least one set of layers being upon a doped III-V semiconductor layer. An epitaxial layer of metal upon an uppermost of the layers of the said set of layers completes the ohmic contact, said metal being capable of wetting the surface of the III-V semiconductor material and of being epitaxially grown on the said III-V semiconductor material. At least the said at least one set of layers and the metal layer are deposited by Molecular Beam Epitaxy, thus avoiding formation of oxides and growing the metal epitaxially so that the metal layer is crystalline at least near the interface between the metal and the semiconductor material. The epitaxial deposition of the metal is conducted at a relatively low temperature of the semiconductor material. In an illustrative embodiment the metal is Al capable of being epitaxially deposited at a temperature within a range of from 1…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.