Method of making semiconductor devices having ohmic contact
US5013686A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 1988 |
| Grant date | May 7, 1991 |
| Priority date | — |
| Expiry date | Sep 30, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/147
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method being capable of achieving the reduction in contact resistance between each layer when bringing a silicide layer into contact with a polycrystalline-silicon (polysilicon) layer in the manufacture of semiconductor devices. The method comprises the steps of forming a polysilicon layer and a silicide layer thereon over a partial top surface of a semiconductor substrate, forming an insulating layer over said silicide layer and the entire top surface of the substrate, forming a contact window by etching the partial area of the insulating layer over said silicide layer, and forming a polysilicon layer over the entire top surface of the substrate after performing ion-implantation through said contact window, wherein said ion-implantation is performed with N-type high doping into the silicide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.