Method of manufacturing a semiconductor using plasma processing
US5013688A · kind A · utility
13Cited by
4References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 26, 1989 |
| Grant date | May 7, 1991 |
| Priority date | — |
| Expiry date | Jul 26, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49121
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved electric device and manufacturing method for the same are described. The device is, for example, an IC chip clothed with moulding. In advance of the moulding process, the IC chip is coated with silicon nitride in order to protect the IC chip from moisture invaded through cracks or gaps. The coating of silicon nitride is carried out after cleaning the surface of the IC chip by plasma CVD.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.