Anisotropic deposition of silicon dioxide
US5013691A · kind A · utility
784Cited by
1References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 31, 1989 |
| Grant date | May 7, 1991 |
| Priority date | — |
| Expiry date | Jul 31, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/118
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a radio-frequency plasma deposition reactor (10), SiO.sub.2 is deposited from a source (16) of tetraethoxysilane (TEOS). The deposition is made to be anisotropic, that is, to be deposited preferentially on horizontal surfaces, by use in the deposition atmosphere of a constituency such as NH.sub.3 or NF.sub.3 which inhibits SiO.sub.2 deposition, along with a radio-frequency power in excess of 100 watts, which preferentially removes the inhibiting gas from horizontal surfaces through ion impact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.