Nonlinear transmission line for generation of picosecond electrical transients
US5014018A · kind A · utility
57Cited by
4References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 6, 1987 |
| Grant date | May 7, 1991 |
| Priority date | — |
| Expiry date | Oct 6, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H7/325
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
There is disclosed herein a non linear transmission line comprised of a 50 ohm coplanar monolithic waveguide formed on top of a gallium arsenide substrate having a layer of lightly doped epitaxial gallium arsenide with a heavily doped buried layer, said epitaxial layer having spaced, electrically isolated islands. A self aligned Schottky diode junction is formed at the intersection of each isolation island with the center conductor of the transmission line. The second conductor of the transmission line is coupled through a contact window and an ohmic contact to the buried layer in each isolation island.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.