MOSFET-gated bipolar transistors and thyristors with both turn-on and turn-off capability having single-polarity gate input signal
US5014102A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Apr 1, 1982 |
| Grant date | May 7, 1991 |
| Priority date | — |
| Expiry date | Apr 1, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/85
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
MOSFET-gated bipolar transistor and thyristor integrated devices combining, as the respective turn-on and turn-off control devices, an enhancement mode MOSFET and a depletion mode MOSFET. The gates of the two MOSFETs are connected to a single device gate terminal. The conduction channel of the depletion mode MOSFET is preferably an implanted region. With gate voltage of appropriate polarity applied, the depletion mode MOSFET is non-conducting and the enhancement mode MOSFET is conducting, biasing the included bipolar transistor or thyristor into conduction. With zero gate voltage applied, the depletion mode MOSFET conducts and the enhancement mode MOSFET is non-conducting, turning off the included bipolar transistor or thyristor. Significantly, only a single polarity gate input signal is required.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.