Fabrication method using oxidation to control size of fusible link
US5015604A · kind A · utility
18Cited by
3References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 18, 1989 |
| Grant date | May 14, 1991 |
| Priority date | — |
| Expiry date | Aug 18, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/904
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The size of a fusible link (22C.sub.F) created from part of a metal layer (22) is controlled by an oxidation performed in a deposition chamber that is also used for depositing a dielectric layer (30) over the fuse structure. The metal layer serves as a diffusion barrier between semiconductor material (14 and 16) and another metal layer (24).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.