Method for removing residual material from a cavity during the manufacture of a semiconductor device by utilizing plasma scattering
US5017265A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 20, 1989 |
| Grant date | May 21, 1991 |
| Priority date | — |
| Expiry date | Dec 20, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32137
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for removing residual material which remains in a cavity after an anisotropic etching process in the manufacture of a partially completed multi-layer semiconductor device, where the cavity is in contact with at least one anisotropic etch-stop layer and is accessible by an etchable layer is disclosed. A plasma etching apparatus which includes a chamber is utilized. The etchable layer is first etched by anisotropic etching in the chamber under predetermined conditions in the plasma etching apparatus until a top of the etch-stop layer is exposed. A plasma scattering etching process is then performed to remove the residual material in the cavity by changing the predetermined conditions of the anisotropic etching process to produce plasma scattering, thereby removing the residual material from the cavity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.