Contact type image sensor
US5017987A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Sep 22, 1989 |
| Grant date | May 21, 1991 |
| Priority date | — |
| Expiry date | Sep 22, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/191
Abstract
A contact type image sensor comprising a transparent substrate, a non-transparent stop layer formed on the transparent substrate and having first windows, an insulator layer formed on the stop layer, a first electrode formed on the insulator layer and having second windows located at positions corresponding to positions of the first windows, a row of photoelectric conversion elements formed on the first electrode and having first and second ends, where each of the first window and the second window are provided in correspondence with one of the photoelectric conversion elements, a transparent second electrode formed on the photoelectric conversion elements, and one or a plurality of dummy windows provided at both the first and second ends of the row of photoelectric conversion elements so that each dummy window is constituted by corresponding windows formed in the stop layer and the first electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.