Divided electrode type semiconductor laser device
US5018159A · kind A · utility
5Cited by
0References
4Claims
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Key dates
| Filing date | Nov 22, 1989 |
| Grant date | May 21, 1991 |
| Priority date | — |
| Expiry date | Nov 22, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/227
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Disclosed is a divided electrode type semiconductor layer device designed to improve the separation of electrodes without reducing the amount of doping for carrier injection layers. A double-hetero-structure is formed on a semi-insulating substrate, and at least two pairs of carrier injection clad layers are thereafter buried like lands while a high-resistance portion is left between the carrier injection clad layers to electrically separate these layers. The electrodes are respectively formed on the separated carrier injection layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.