Plasma apparatus
US5019117A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 12, 1989 |
| Grant date | May 28, 1991 |
| Priority date | — |
| Expiry date | Jun 12, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32678
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a plasma apparatus, in which a plasma is generated by the use of an electron cyclotron resonance, said plasma being introduced into a sample chamber where a sample is housed through a plasma outlet window by the use of a magnetic field for use in the electron cyclotron resonance, and said sample being subjected to a film-formation or an etching, characterized by that the distribution of magnetic flux density on a surface of the sample can be improved to uniform the plasma density, whereby subjecting the sample with the film-formation of uniformly thick or a uniform etching, by disposing a magnetic field forming means capable of forming a magnetic filed, wherein the magnetic flux density at the peripheral edge portion of the sample is higher than that at the central portion of the sample, on a side opposite to the plasma outlet window relatively to the sample.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.