Process for forming a reduced electrochromic layer in contact with an ion conducting oxide
US5019420A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jan 17, 1989 |
| Grant date | May 28, 1991 |
| Priority date | — |
| Expiry date | Jan 17, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S359/90
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A process, based on sputtering from metal sources, is disclosed for forming a stable, reduced electrochromic layer in contact with an ionically conducting oxide. A deposited electrochromic layer is reduced by sputtering onto it an alloy or composite metallic thin film capable of injecting insertion atoms into the electrochromic layer. The metallic thin film, now partially depleted in insertion atoms, is converted into an electronically insulating but ionically conducting oxide layer in an oxidizing atmosphere. The resultant two-layer structure, consisting of the reduced electrochromic layer capped by the insulating oxide, may be used as on component in an all solid-state electrochromic device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.