Process for making polysilicon contacts to IC mesas
US5019523A · kind A · utility
0Cited by
21References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 30, 1990 |
| Grant date | May 28, 1991 |
| Priority date | — |
| Expiry date | Mar 30, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/965
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a process for making a bipolar transistor which comprises an n-type Si semiconductor body having a convex portion, an insulation film covering the surface of the semiconductor body other than the convex portion, and a p-type polycrystalline Si layer formed on the insulation film. A p-type region formed in the convex portion serves as an intrinsic base region, the polycrystalline Si layer serves as an extrinic base region, an n-type region formed in the intrinsic base region serves as an emitter region, and the body serves as a collector region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.