Thick film substrate with highly thermally conductive metal base
US5019675A · kind A · utility
3Cited by
6References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 5, 1989 |
| Grant date | May 28, 1991 |
| Priority date | — |
| Expiry date | Sep 5, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3025
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A novel hybrid thick film substrate is enabled by utilizing a highly thermally conductive base metal such as copper. The base metal is passivated by a suitable technique to prevent oxidation. One or more dielectric layers are then screened onto the passivation layer and fired at temperatures upwards of 600.degree. C. The surface of the substrate is then in a condition to accept formation of a conductive pattern or the like.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.