Semiconductor device radiation hardened MESFET
US5019875A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 26, 1990 |
| Grant date | May 28, 1991 |
| Priority date | — |
| Expiry date | Oct 26, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/906
Abstract
This invention is for improving the radiation hardness or radiation resistance of GaAs MESFETs. According to this invention, an n-type active layer is formed by doping GaAs crystal evenly in the depth direction of the GaAs crystal, and a Schottky gate electrode is provided on the active layer, so that the carrier concentration in the active layer and the thickness of the active layer are set to required values. According to this invention, not only in the case of a total dose of exposure radiation of R=1.times.10.sup.9 roentgens but also in the case of a higher total dose, at least one of the threshold voltage V.sub.th of the GaAs MESFET, the saturated drain current I.sub.dss thereof, and the transconductance g.sub.m will remain in their tolerable ranges. Consequently a semiconductor device comprising the GaAs MESFET and a signal processing circuit cooperatively combined therewith can operate normally as initially designed, with the result of conspicuously improved radiation hardness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.