Input protective apparatus of semiconductor device
US5019883A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 30, 1989 |
| Grant date | May 28, 1991 |
| Priority date | — |
| Expiry date | Nov 30, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An input protective apparatus for a semiconductor device (Q3) comprises an MOS transistor (Q4) having a thick gate insulating film formed therein. The MOS transistor (Q4) has one active layer connected to an input terminal (11) through a second resistor element (R2) and connected to a semiconductor device (Q3) to be protected through a first resistor element (R1), and an other active layer connected to a ground terminal. The input protective apparatus is adapted such that a resistance value R.sub.1 of a first resistor element (R1) and a resistance value R.sub.2 of the second resistor element (R2) satisfy the relation R.sub.1 >R.sub.2, and the on-resistance R.sub.3 of the MOS transistor (Q4) and the resistance value R.sub.2 satisfy the relation R.sub.3 <<R.sub.2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.