Surface-emitting-type semiconductor laser device
US5020066A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Dec 27, 1989 |
| Grant date | May 28, 1991 |
| Priority date | — |
| Expiry date | Dec 27, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2222
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A surface-emitting-type semiconductor laser device having a buried structure wherein a burying part having a current blocking function is formed around a buried part comprising an active region. A reflecting mirror consisting of a semiconductor multilayer film is installed on the buried part and the burying part, and the Bragg wavelength of this semiconductor multilayer film is set in matching with a longitudinal mode one mode higher than the longitudinal mode of oscillation in pulse operation. This semiconductor multilayer film has a configuration wherein two kinds of GaAlAs layers having different composition ratios of Al are laminated alternately, and the layer thickness of each GaAlAS layer constituting the semiconductor multilayer film is set so as to able to realize the Bragg wavelength calculated theoretically.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.