Semiconductor laser device
US5020067A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jan 30, 1990 |
| Grant date | May 28, 1991 |
| Priority date | — |
| Expiry date | Jan 30, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2004
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser device includes an n type Al.sub.x Ga.sub.1-x As first cladding layer disposed on an n type GaAs substrate, an n type Al.sub.y Ga.sub.1-y As (x>y) light guide layer disposed on the first cladding layer, an Al.sub.z Ga.sub.l-z As (y>z) active layer disposed on the light guide layer, a p type Al.sub.p Ga.sub.l-p As second cladding layer disposed on the active layer and including a ridge except in the neighborhood of at least of the cavity facets, an n type GaAs current blocking layer disposed on the second cladding layer but not on top of the ridge, and a p type GaAs contact layer disposed on the current blocking layer and on top of the ridge portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.