Apparatus for treating material by using plasma
US5021114A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 19, 1988 |
| Grant date | Jun 4, 1991 |
| Priority date | — |
| Expiry date | Jul 19, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3266
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A sputter etching apparatus including a vacuum chamber provided with a gas supply system and an evacuator, a sputter etching electrode disposed within the vacuum chamber on which a substrate is disposed, a plasma generator for generating plasma by applying microwave energy and disposed in opposition to the sputter etching electrode, a voltage applying stud provided in association with the sputter etching electrode for causing ions in the plasma to impact against the substrate, a first power supply source provided in association with the plasma generator for generating the plasma, and a second power supply source provided independent of the first power supply source for supplying the voltage for causing the ions to impact against the substrate. A magnetic field generating magnet or coil assembly can be incorporated in the apparatus for generating a magnetic field in such a manner in which the plasma produced within a space defined between the substrate and the microwave inlet window is peripherally surrounded by the magnetic lines of forces. Further disclosed in a plasma treatment apparatus which includes an activating chamber equipped with plasma generator and a first raw gas suppl…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.