Side source center sink plasma reactor
US5021138A · kind A · utility
Inventors
Key dates
| Filing date | Sep 18, 1989 |
| Grant date | Jun 4, 1991 |
| Priority date | — |
| Expiry date | Sep 18, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2203/095
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A system for plasma etching predetermined portions of material on the major surfaces of a plurality of substrates. The system comprises a plasma reactor chamber, provision for continuously introducing a gas to be converted in a reactive species by an electrical field, provision for forcing the gas through one or more through holes in the substrates, provision for continuously exhausting gas, an automatic transport or drive mechanism connected to the chamber and to the substrates to facilitate the advancement of substrates seriatim along a predetermined path in the chamber, and a vacuum lock connected to the chamber for maintaining a substantially constant atmosphere in the chamber while each of the substrates is inserted into and removed from the chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.