Method for making a field effect transistor integrated with an opto-electronic device
US5021361A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 11, 1989 |
| Grant date | Jun 4, 1991 |
| Priority date | — |
| Expiry date | Dec 11, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/119
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In a monolithic OEIC in which an FET and a light-emitting device are integrated, the light-emitting device has a first clad layer, an active layer, and a second clad layer stacked on a substrate, the FET has a channel layer and source and drain layers with a high impurity concentration stacked on the substrate, etching mask layers on the source and drain layers, and a gate electrode formed on a channel layer between source and drain electrodes and the source and drain layers, the first clad layer of the light-emitting diode and the source and drain layers with a high impurity concentration of the FET are formed of the same semiconductor layer, and an active layer of the light-emitting device and the etching mask layers of the FET are formed of the same semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.