Low carbon/high purity boron nitride
US5021371A · kind A · utility
2Cited by
6References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 20, 1990 |
| Grant date | Jun 4, 1991 |
| Priority date | — |
| Expiry date | Feb 20, 2010 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B35/583
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Highly pure boron nitride ceramic material, devoid of silicon values and having low carbon content, is prepared by pyrolyzing, under an atmosphere of ammonia, the product of the reaction between (i) at least one B-trihalogeno-borazole having the formula: ##STR1## and (ii) at least one primary amine having the formula: EQU H.sub.2 N--R in which formulae X is a halogen atom and R is an optionally substituted hydrocarbon radical having from 1 to 6 carbon atoms.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.