Semiconductor integrated circuit device
US5021852A · kind A · utility
13Cited by
6References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 18, 1989 |
| Grant date | Jun 4, 1991 |
| Priority date | — |
| Expiry date | May 18, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/401
Abstract
This invention relates to a semiconductor integrated circuit device which has an insulated-gate type element part comprising a capacitor which is formed through the use of a trench in a semiconductor layer, wherein a low-resistance buried layer is formed in the semiconductor layer prior to forming the trench so that the trench is formed to be surrounded by the low-resistance buried layer and thereby the low-resistance buried layer is used as an electrode of the capacitor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.