Method of wet etching by use of plasma etched carbonaceous masks
US5022959A · kind A · utility
44Cited by
5References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 11, 1989 |
| Grant date | Jun 11, 1991 |
| Priority date | — |
| Expiry date | Aug 11, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A substrate having a film to be etched is coated with a carbon film. The carbon film is then coated with an organic mask. The mask is then patterned to expose portions of the carbon film. Plasma etching is then utilized to remove portions of the carbon film not covered by the mask, followed by wet etching to form a predetermined pattern in the film on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.