Method for forming a MOSFET with substrate source contact
US5023196A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 29, 1990 |
| Grant date | Jun 11, 1991 |
| Priority date | — |
| Expiry date | Jan 29, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/168
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A MOSFET having a back-side source contact and top-side gate and drain contacts is provided by a structure comprising superposed N.sup.+, N-,P-, N.sup.+ regions arranged between top and bottom surfaces of the semiconductor die. In a preferred implementation, two trenches are etched from the top surface to the P-, N.sup.+ interface. A buried P-, N.sup.+ short is provided in one trench and a gate dielectric and gate electrode are provided over the sidewall P- region exposed in the other trench. This creates a vertical MOSFET in which the N.sup.+ substrate forms the source region shorted to the P- body region in which the channel is created by the gate. Superior performance is obtained in RF grounded-source circuit applications.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.