Electrostatic discharge protection device for gallium arsenide resident integrated circuits
US5023672A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Nov 15, 1989 |
| Grant date | Jun 11, 1991 |
| Priority date | — |
| Expiry date | Nov 15, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/60
Abstract
A mechanism for effectively preventing damage to a GaAs-resident semiconductor device directs electrostatic charge buildup to a neutralizing source of reference potential by means of a parasitic bypass Schottky circuit that is effectively invisible to normal input signals, but which otherwise provides a current sink discharge path for the unwanted electrostatic charge. The mechanism employs one or more parasitic Schottky diodes formed as a result of the deposition of input/power supply metal on the surface of a semi-insulating GaAs substrate, coupled in series with low resisitivity regions between the input metal and respective power supply terminals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.