Semiconductor device
US5023698A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 23, 1989 |
| Grant date | Jun 11, 1991 |
| Priority date | — |
| Expiry date | Mar 23, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A metallization film layer disposed on a semiconductor chip is made of Cu alloy which contains a metal element less noble than Cu and whose balance consists of Cu and unavoidable impurities. The metal element less noble than Cu is at least one kind of members selected from the group consisting of Al, Be, Cr, Fe, Mg, Ni, Si, Sn and Zn. Cu alloy as the metallization film layer improves corrosion resistance by adding a trance amount of a metal element less noble than Cu within such a range where electric conductivity is not much reduced to Cu without lowering high electric conductivity, high heat resistance and high electro-migration resistance of Cu.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.