Patent · US Expired

Pressure sensor comprising a silicon body

US5024097A · kind A · utility

11Cited by

3References

9Claims

0Family size

Assignee

U.S. Philips Corporation · US

Inventors

Volker Graeger · Kürten, DE
Rolf U. D. Kobs · Tornesch, DE

Key dates

Filing date	Sep 20, 1989
Grant date	Jun 18, 1991
Priority date	—
Expiry date	Sep 20, 2009

Classification

Technology area (CPC G)Physics
CPC primaryG01L9/0054
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

A pressure sensor comprising a silicon body (1) which is arranged on a substrate (2). The silicon body (1) comprises a cavity (4) in the form of a blind hole, or enclosed chamber which thus forms a diaphragm (5). On the outer surface thereof there is arranged a Wheatstone bridge consisting of piezoresistive resistance elements (6, 7, 8, 9). The voltage/pressure characteristic of this pressure sensor exhibits a non-linearity of more than 1% in the case of pressure loads in excess of 250 bar. This non-linearity must be reduced. Therefore, a further cavity (10) is provided in the silicon body (1) on both sides of the resistance elements (8, 9) arranged at the edge of the diaphragm (5).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.