Semiconductor light source temperature measurement
US5024535A · kind A · utility
40Cited by
12References
11Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 20, 1989 |
| Grant date | Jun 18, 1991 |
| Priority date | — |
| Expiry date | Dec 20, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/06808
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A temperature sensing semiconductor device is fabricated in the same substrate as a semiconductor light source. A sensing voltage generated across the sensing device is proportional to light source temperature. The sensing voltage is amplified by an operational amplifier, and converted into a digital signal by an analog to digital converter. A microprocessor converts the digital signal into a corresponding temperature signal using a look-up table.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.