Dry-etching method
US5024724A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 16, 1989 |
| Grant date | Jun 18, 1991 |
| Priority date | — |
| Expiry date | Oct 16, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32136
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a novel dry-etching method for patterning a metallic film, whose surface is provided with an oxidized film, into an optional configuration by the use of the oxidized film. After drawing etching patterns of the metallic film by irradiating energy beam to the oxidized film formed on the surface of the metallic film, the dry-etching method according to the present invention causes the metallic film to expose itself to either radicals of reactive gas or to etching gas, and then selectively removes the area of metallic film in correspondence to the beam irradiated area of the oxidized film by applying chemical etching, thus eventually allowing the metallic film to be patterned into an optional configuration, without incuring physical damage to the etching face of the metallic film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.