Methods for making photodectors
US5026660A · kind A · utility
6Cited by
9References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 6, 1989 |
| Grant date | Jun 25, 1991 |
| Priority date | — |
| Expiry date | Sep 6, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/944
Abstract
A shadow-masking process for manufacturing low dark current photodetectors with low noise characteristics is disclosed. The process includes shadow-masking a semiconductor wafer by positioning a patterned shadow-mask on a surface of the wafer. The shadow-mask is patterned with, for example, circular openings or stripe openings. Layers, such as metallization layers to form metallic contacts or anti-reflection layers are deposited onto the wafer through the patterned openings in the shadow-masks. This shadow-masking process may be used in the production of any semiconductor device requiring patterned layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.