MOSFET including current mirror FET therein
US5027251A · kind A · utility
13Cited by
0References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 15, 1989 |
| Grant date | Jun 25, 1991 |
| Priority date | — |
| Expiry date | Aug 15, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2217/0027
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A MOSFET device including a power MOSFET and a current mirror MOSFET, in which the drains of the two MOSFETs are coupled in common to each other, and the gate electrodes of the two MOSFETs are linked in common to each other, and in which a diode device for protecting a gate oxide film for the current mirror MOSFET is connected between the sources of the two MOSFETs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.